ss22-m3, ss23-m3, ss24-m3, ss25-m3, SS26-M3 www.vishay.com vishay general semiconductor revision: 04-aug-15 1 document number: 89278 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier typical applications for use in low voltage high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 mechanical data case: do-214aa (smb) ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end ? ? ? note (1) pulse test: 300 s pulse width, 1 % duty cycle primary characteristics i f(av) 2.0 a v rrm 20 v, 30 v, 40 v, 50 v, 60 v i fsm 75 a v f 0.50 v, 0.70 v t j max. 150 c package do-214aa (smb) diode variations single do-214aa ( s mb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss22 ss23 ss24 ss25 ss26 unit device marking code s2 s3 s4 s5 s6 maximum repetitive pe ak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v max. average forward rectified current at t l (fig. 1) i f(av) 2.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 75 a non-repetitive avalanche energy at t a = 25 c, ? i as = 2.0 a, l = 10 mh e as 20 mj electrostatic discharg e capacitor voltage ? human body model: c = 100 pf, r = 1.5 k ? v c 8.0 kv voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ss22 ss23 ss24 ss25 ss26 unit maximum instantaneous forward voltage (1) 2.0 a v f 0.5 0.7 v maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c i r 0.4 ma t a = 100 c 10
ss22-m3, ss23-m3, ss24-m3, ss25-m3, SS26-M3 www.vishay.com vishay general semiconductor revision: 04-aug-15 2 document number: 89278 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pcb mounted with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas ratings and characteristics curves (t a = 25 ? c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-re petitive surge current fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse current characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbolss22ss23ss24ss25ss26unit typical thermal resistance (1) r ? ja 75 c/w r ? jl 17 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode ss24-m3/52t 0.096 52t 750 7" diam eter plastic tape and reel ss24-m3/5bt 0.096 5bt 3200 13" diam eter plastic tape and reel 0 0.5 1.0 1.5 2.0 2.5 0255075100125150 average forward rectified current (a) lead temperature ( c) pcb mounted on 0.2 " x 0.2 " (5.0 mm x 5.0 mm) copper pad area ss 22 thru ss 26 1 10 100 0 20 40 60 80 100 at rated t l 8.3 ms single half sine-wave number of cycles at 60 hz peak forward surge current (a) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t j = 25 c ss22 thru ss24 ss25 and ss26 pul s ewidth = 300 s 1 % duty cycle t j = 150 c 0.001 0.01 0.1 1 10 100 1000 0 20406080100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t j = 150 c t j = 125 c ss22 thru ss24 ss25 and ss26 t j = 25 c t j = 75 c
ss22-m3, ss23-m3, ss24-m3, ss25-m3, SS26-M3 www.vishay.com vishay general semiconductor revision: 04-aug-15 3 document number: 89278 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) 10 100 1000 0.1 1 10 100 reverse voltage (v) junction capaci tance (pf) ss22 thru ss24 ss25 and ss26 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0.180 (4.57) 0.160 (4.06) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) do-214aa (smb) 0 (0) cathode band 0.085 (2.159) max. 0.220 ref. 0.086 (2.18) min. 0.060 (1.52) min. mounting pad layout
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